schottky barrier diode RBQ10B45A l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)power mold type.(cpd) 2)low i r 3)high reliability l construction l structure silicon epitaxial planer l taping specifications (unit : mm) l absolute maximum ratings (tc=25 c) symbol unit v rm v v r v io a i fsm a tj c tstg c (*2)per diode. l electrical characteristics (tj=25c) symbol min. typ. max. unit conditions forward voltage v f - - 0.65 v i f =5a reverse current i r - - 0.15 ma v r =45v parameter limits reverse voltage (repetitive peak) 45 reverse voltage (dc) 45 storage temperature - 40 to + 150 (*1)business frequencies, rating of r-load, 1/2 io per diode. parameter average rectified forward current (*1) 10 forward current surge peak (60hz ? 1cyc)(*2) 50 junction temperature 150 rohm : cpd manufacture date jeita : sc - 63 6.5 0.2 5.1 0.2 0.1 c0.5 1.5 0.3 5.5 0. 3 2.3 0.2 2.3 0.2 0.9 0.75 0.65 0.1 1 2 3 0.5 0.1 1.0 0.2 9.5 0.5 0.8 min 2.5 0.5 0.1 2.3 0.2 0.1 1.6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 cpd 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RBQ10B45A 1 10 100 1000 0 5 10 15 20 25 30 500 510 520 530 540 550 560 570 580 590 600 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) ta=25 c ta=125 c ta= - 25 c ta=75 c ta=150 c 0.01 0.1 1 10 100 1000 10000 100000 0 10 20 30 40 50 reverse current:i r ( m a) ta= - 25 c ta=25 c ta=75 c ta=125 c ta=150 c reverse voltage v f (v) v r - i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz ave:551.3mv ta=25 c i f =5a n=30pcs v f dispersion map forward voltage:v f (mv) 0 5 10 15 20 25 30 reverse current:i r ( m a) i r dispersion map ave:12.2 m a ta=25 c v r =45v n=30pcs 450 460 470 480 490 500 510 520 530 540 550 ave:489.8pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10B45A 0 50 100 150 200 250 300 8.3ms 1cyc i fsm ave121a ifsm dispersion map peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ave:10.8ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reserse recovery time:trr(ns) 0 50 100 150 200 250 300 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current: i fsm (a) number of cycles ifsm - cycle characteristics 0 50 100 150 200 250 300 1 10 100 t i fsm peak surge forward current: i fsm (a) time:t(ms) ifsm - t characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) average rectified forward current io(a) io - pf characteristics 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 forward power dissipation:pf(w) dc d = 1/2 sin( q 180) 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10B45A reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics 0 0.5 1 1.5 2 0 10 20 30 40 50 sin( q 180) dc d = 1/2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 v r io t d=t/t v r =20v tj=150 c t 0a 0v dc d=1/2 sin( q 180) average rectified forward current:io(a) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 v r io t tj=150 c d=t/t v r =20v 0a 0v t sin( q 180) dc d = 1/2 average rectified forward current:io(a) case temperature:tc( c ) derating curve(io - tc) 0 5 10 15 20 25 30 ave:4.9kv c=100pf r=1.5k w c=200pf r=0 w ave:23.3kv electrostatic discharge test esd(kv) esd dispersion map ambient temperature:ta( c ) derating curve(io - ta) 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
|
